Electronic Structure and Thermoelectric Properties of Mg2Sn Films Fabricated by Using Co-Sputtering Process With Stoichiometric Modification

Autor: Sara Kim, Nam-Hoon Kim
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: IEEE Access, Vol 10, Pp 380-390 (2022)
Druh dokumentu: article
ISSN: 2169-3536
DOI: 10.1109/ACCESS.2021.3137868
Popis: Colossal values of the Seebeck coefficient were first discovered in Mg-poor Mg2Sn films in the temperature range 600–700 K. Cubic and orthorhombic structures of the Mg2Sn films for solid-state thermoelectric energy conversion devices were prepared by radio frequency (RF) magnetron co-sputtering. The Mg-Sn films showed a structural phase transition between the metastable orthorhombic and the stable cubic structures as the atomic ratio Mg/Sn varied near the stoichiometric ratio. The Mg-poor orthorhombic Mg-Sn films transited from p-type to n-type conductivity at 500 K and exhibited colossal values of the Seebeck coefficient and power factor in the temperature range 600–700 K. The colossal Seebeck coefficient, which exceeded −10 mVK−1, indicates long-term stability over a wide temperature range. Furthermore, the energy band structure and density-of-state were calculated for the cubic and the orthorhombic Mg2Sn using the first-principles calculation with the Perdew-Burke-Ernzerhof (PBE0) hybrid functionals, which yielded results that were consistent with the experimental data.
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