| Autor: |
A.K. Sahoo, P.-H. Chen, C.-H. Lin, R.-S. Liu, B.-J. Lin, T.-S. Kao, P.-W. Chiu, T.-P. Huang, W.-Y. Lai, J. Wang, Y.-Y. Lee, C.-K. Kuan |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Micro and Nano Engineering, Vol 20, Iss , Pp 100215- (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2590-0072 |
| DOI: |
10.1016/j.mne.2023.100215 |
| Popis: |
In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
