Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review
Autor: | Ye Jin Jang, Ashutosh Sharma, Jae Pil Jung |
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Jazyk: | angličtina |
Rok vydání: | 2023 |
Předmět: |
three-dimensional packaging
through-Si-via Cu pillar bonding hybrid composite bonding high entropy alloys Technology Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
Zdroj: | Materials, Vol 16, Iss 24, p 7652 (2023) |
Druh dokumentu: | article |
ISSN: | 1996-1944 |
DOI: | 10.3390/ma16247652 |
Popis: | Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency. |
Databáze: | Directory of Open Access Journals |
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