| Autor: |
D. Parajuli, Deb Kumar Shah, Devendra KC, Subhash Kumar, Mira Park, Bishweshwar Pant |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Electrochem, Vol 3, Iss 3, Pp 407-415 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2673-3293 |
| DOI: |
10.3390/electrochem3030028 |
| Popis: |
The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conversion efficiency of single junction-based InGaN solar cells was studied by the Silvaco ATLAS simulation software. The doping concentration 5 × 1019 cm−3 and 1 × 1015 cm−3 were optimized for n-InGaN and p-InGaN regions, respectively. The thickness of 300 nm was optimized for both n-InGaN and p-InGaN regions. The highest efficiency of 22.17% with Jsc = 37.68 mA/cm2, Voc = 0.729 V, and FF = 80.61% was achieved at optimized values of doping concentration and thickness of n-InGaN and p-InGaN regions of InGaN solar cells. The simulation study shows the relevance of the Silvaco ATLAS simulation tool, as well as the optimization of doping concentration and thickness of n- and p-InGaN regions for solar cells, which would make the development of high-performance InGaN solar cells low-cost and efficient. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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