| Autor: |
Akito Ayukawa, Nozomu Kiridoshi, Wakaba Yamamoto, Akira Yasuhara, Haruhiko Udono, Shunya Sakane |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Applied Physics Express, Vol 17, Iss 6, p 065501 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1882-0786 |
| DOI: |
10.35848/1882-0786/ad4f4c |
| Popis: |
High-quality epitaxial Mg _3 Sb _2 thin films are promising thermoelectric materials to enable practical applications of compact and environmentally friendly thermoelectric conversion at RT. In this study, high-quality single-crystal Mg _3 Sb _2 with high c-plane orientation was epitaxially grown directly on annealed c-Al _2 O _3 substrates without passive layers. These thin films exhibited about three times higher thermoelectric power factor than any previously reported values due to high carrier mobility. The ultra-smooth surface of the annealed c-Al _2 O _3 substrate facilitated the formation of high-quality Mg _3 Sb _2 thin films without passive layers or polycrystalline interfaces that could be carrier scatters. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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