On-wafer wideband characterization: a powerful tool for improving the IC technologies

Autor:	Dimitri Lederer, Jean-Pierre Raskin
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	silicon-on-insulator MOSFET wideband characterization microwave frequency extraction techniques smallsignal equivalent circuit Telecommunication TK5101-6720 Information technology T58.5-58.64
Zdroj:	Journal of Telecommunications and Information Technology, Iss 2 (2023)
Druh dokumentu:	article
ISSN:	1509-4553 1899-8852
DOI:	10.26636/jtit.2007.2.811
Popis:	In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/163c694c2dc342d0a1506e1a1af11130 Zobrazit plný text záznamu View record in DOAJ