| Autor: |
Seok Hwan Jeong, Na Liu, Heekyeong Park, Young Ki Hong, Sunkook Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Applied Sciences, Vol 8, Iss 3, p 424 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2076-3417 |
| DOI: |
10.3390/app8030424 |
| Popis: |
It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD) aluminum oxide (Al2O3) passivation on multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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