Autor: |
A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, S. V. Kravchenko |
Jazyk: |
angličtina |
Rok vydání: |
2022 |
Předmět: |
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Zdroj: |
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022) |
Druh dokumentu: |
article |
ISSN: |
2045-2322 |
DOI: |
10.1038/s41598-022-09034-x |
Popis: |
Abstract The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $$T_{\text {max}}$$ T max , at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $$T_{\text {max}}$$ T max decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of $$T_{\text {max}}$$ T max cannot be described by existing theories. The results indicate the spin-related origin of the effect. |
Databáze: |
Directory of Open Access Journals |
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