Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

Autor: Z. Bian, K. J. Rae, B. C. King, D. Kim, G. Li, S. Thoms, D. T. D. Childs, N. D. Gerrard, N. Babazadeh, P. Reynolds, J. Grant, A. F. McKenzie, J. R. Orchard, R. J. E. Taylor, R. A. Hogg
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: AIP Advances, Vol 11, Iss 6, Pp 065315-065315-5 (2021)
Druh dokumentu: article
ISSN: 2158-3226
DOI: 10.1063/5.0053535
Popis: This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.
Databáze: Directory of Open Access Journals