A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully Depleted Silicon-on-Insulator (FD-SOI) CMOS
| Autor: | Liang-Wei Ouyang, Jill C. Mayeda, Clint Sweeney, Donald Y. C. Lie, Jerry Lopez |
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| Jazyk: | angličtina |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Applied Sciences, Vol 14, Iss 7, p 3080 (2024) |
| Druh dokumentu: | article |
| ISSN: | 14073080 2076-3417 |
| DOI: | 10.3390/app14073080 |
| Popis: | This paper presents a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS technology. Electromagnetic (EM) simulations suggest that the LNA has a 3-dB bandwidth (BW) from 17.8 to 42.4 GHz and a fractional bandwidth (FBW) of 81.7%, covering the key frequency bands within the mm-Wave 5G FR2 band, with its noise figure (NF) ranging from 2.9 to 4.9 dB, and its input-referred 1-dB compression point (IP1dB) of −17.9 dBm and input-referred third-order intercept point (IIP3) of −8.5 dBm at 28 GHz with 15.8 mW DC power consumption (PDC). Using the FOM (figure-of-merit) developed for broadband LNAs (FOM = 20 × log((Gain[V/V] × S21-3 dB-BW [GHz])/(PDC [mW] × (F-1)))), this LNA achieves a competitive FOM (FOM = 18.9) among reported state-of-the-art mm-Wave LNAs in the literature. |
| Databáze: | Directory of Open Access Journals |
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