| Autor: |
Aimin Wang, Kaixuan Chen, Jinchai Li, Junyong Kang |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 14, Iss 4, Pp 1-5 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2022.3140775 |
| Popis: |
We demonstrated high-brightness InGaN/GaN green light emitting diodes (LEDs) with ex-situ sputtered stress-manipulated AlNO buffer on 4-inch patterned sapphire substrates. The lattice constant of the AlNO buffer was adjusted by oxygen flow. As a result, the dislocation density and the in-plane compressive stress caused by lattice mismatch were greatly reduced, while the interface quality of the InGaN/GaN multiple quantum wells and the uniformity of the indium composition were greatly improved. At 20A/cm2, the external quantum efficiency and wall plug efficiency of the 526.4-nm-green LEDs grown on the sputtered AlNO buffer reached 46.1% and 41.9%, which were both higher than reported values. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
