NSOM Lithography for Organized Growth of Gap Nanowires

Autor: Ivana Lettrichova, Dusan Pudis, Agata Laurencikova, Stanislav Hasenohrl, Jozef Novak, Jaroslava Skriniarova
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: Communications, Vol 16, Iss 1, Pp 21-25 (2014)
Druh dokumentu: article
ISSN: 1335-4205
2585-7878
DOI: 10.26552/com.C.2014.1.21-25
Popis: In this contribution, near field scanning optical microscope (NSOM) lithography is presented as a tool for organized growth of nanowires. Non contact mode of NSOM lithography was used to pattern planar structures in photoresist deposited on GaP substrate. In combination with lift-off technique, metal-catalyst particles on GaP substrate for subsequent growth of GaP nanowires were prepared. Different periodic and predefined arrangements of GaP nanowires were achieved.
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