A Temperature-Aware Framework on gm/ID-Based Methodology Using 180 nm SOI From −40 °C to 200 °C

Autor: Joao Roberto Raposo De Oliveira Martins, Ali Mostafa, Jerome Juillard, Rachid Hamani, Francisco De Oliveira Alves, Pietro Maris Ferreira
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: IEEE Open Journal of Circuits and Systems, Vol 2, Pp 311-322 (2021)
Druh dokumentu: article
ISSN: 2644-1225
DOI: 10.1109/OJCAS.2021.3067377
Popis: The advent of the Internet-of-Things brings new challenges in circuit design. The presence of circuits and sensors in harsh environments brought the need for methodologies that account for them. Since the beginning of the transistors, the temperature is known for having a significant impact on performance, and even though very low temperature sensitivity circuits have been proposed, no general methodology for designing them exists. This paper proposes a gm over Id technique for designing temperature-aware circuits that can be used either on measurement data, analytically, or based on simulation models. This model is validated using measurements up to 200°C of X-FAB XT018 transistors and later with a circuit design example.
Databáze: Directory of Open Access Journals