| Autor: |
Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 11, Pp 467-472 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2023.3307124 |
| Popis: |
Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a ${c}$ -axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown voltage. A combination of the OSFET with ${L}/{W}$ of 60 nm/60 nm and a single damascene ferroelectric capacitor (FE-Cap) attained FE-Cap area reduction to $0.06~\mu \text{m}~^{\mathrm{ 2}}$ per cell. The FeRAM achieved a write time of 10 ns, a rewriting endurance of 109 cycles, and a data retention time of 100 min at 85°C. The OSFET is an optimal selector element for emerging memories. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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