1/f noise and carrier transport mechanisms in InSb p + -n junctions
| Autor: | V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 4, Pp 374-379 (2018) |
| Druh dokumentu: | article |
| ISSN: | 1560-8034 1605-6582 |
| DOI: | 10.15407/spqeo21.04.374 |
| Popis: | The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise. |
| Databáze: | Directory of Open Access Journals |
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