| Autor: |
Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Thi Thuy Vi Tran, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Jutta Schwarzkopf, Andreas Popp |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 11, Iss 11, Pp 115323-115323-6 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0069243 |
| Popis: |
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth parameters were investigated to increase the growth rate and maintain the step-flow growth mode, wherein the enhanced diffusion channel due to the formation of a Ga adlayer was proposed to be the possible growth mechanism. Si doping allowed precise control of the n-type conductivity of the films with electron concentrations ranging from 1.5 × 1017 to 1.5 × 1019 cm−3 and corresponding mobilities from 144 to 21 cm2 V−1 s−1, as revealed by Hall effect measurements at room temperature. Secondary ion mass spectrometry confirmed homogeneous Si doping through the film and a one-to-one correlation between the Si concentration and the electron concentration. Low defect density in the films was determined by x-ray diffraction measurements. The demonstration of a high growth rate process of β-Ga2O3 films with μm level thickness and smooth surface morphology via MOVPE is critical for high power electronics with vertical device architecture. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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