Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate
| Autor: | Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 4, Pp 360-364 (2018) |
| Druh dokumentu: | article |
| ISSN: | 1560-8034 1605-6582 |
| DOI: | 10.15407/spqeo21.04.360 |
| Popis: | In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy 2 O 3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of film-substrate interface and increasing the optical transmission of Dy 2 O 3 /por-SiC/SiC structure. |
| Databáze: | Directory of Open Access Journals |
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