| Autor: |
Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1117-1124 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2021.3108882 |
| Popis: |
A layered polycrystalline WS2 film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its $p$ MISFET is successfully demonstrated with TiN/HfO2 top-gate stack, TiN contact, and ultra-thin body and box technologies. A WS2 film with a (002) plane is formed parallel to a substrate surface using RF magnetron sputtering, and its crystallinity is drastically enhanced by the SVA. $I$ – $V$ characteristics with $p$ -type operation are confirmed in WS2 MISFETs with a maximum field effect mobility of $1.5\times10$ −2 cm2V−1s−1. Therefore, our film-formation method is a promising candidate for $p$ MOSFETs in CMOS circuits. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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