| Autor: |
Mengtao Gong, Fei Huang, Shouqin Tian, Xiujian Zhao, Baoshun Liu |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 11, Iss 12, Pp 125232-125232-7 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0074628 |
| Popis: |
Polycrystalline VO2 films were obtained through a vacuum annealing of sputtered V-rich films over quartz substrates and were characterized with x-ray diffraction, field-emission scanning electron microscopy, and x-ray photoelectron spectroscopy, respectively. The semiconductor–metal transition (SMT) was studied with the temperature-variable electric resistances. It was seen that the VO2 film crystalline orientation changes with the O2 partial pressure during the vacuum annealing. We observed a relation between the thermal hysteresis of the SMT and the crystalline orientation of the monoclinic VO2 films. The (011) oriented monoclinic film presents a narrower thermal hysteresis and a larger transition amplitude as compared to the (200) orientated films. In addition, a transition shoulder appears in the thermal hysteresis of the SMT for the (200) oriented VO2 films during the cooling process and becomes absent for the (011) orientated VO2 films. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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