| Autor: |
Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki, Jun Hirabayashi |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Applied Physics Express, Vol 17, Iss 7, p 071004 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1882-0786 |
| DOI: |
10.35848/1882-0786/ad5bbe |
| Popis: |
We have found microgrooves on the (001) β -Ga _2 O _3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μ A at −64 V]. The microgrooves tended to align in the [010] direction and each microgroove consisted of (100), (001), and ( $\mathop{1}\limits^{\unicode{x00305}}$ 02) low-index microfacets. The microgrooves were accompanied by polycrystalline defects on the [ $\mathop{1}\limits^{\unicode{x00305}}$ 00] side. The electric field at the bottom of the microgrooves reached 5.27 × 10 ^5 V cm ^−1 at $-$ 50 V, which is approximately twice that of the flat surface. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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