| Autor: |
Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Heliyon, Vol 9, Iss 8, Pp e19002- (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2405-8440 |
| DOI: |
10.1016/j.heliyon.2023.e19002 |
| Popis: |
We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in silicon carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater than 1 when the source gas for CVD was dimethylsilane (DMS). Thus, we tried to change carbon-inclusion levels in the film by injecting some ion beams into a depositing SiC film during the CVD process with DMS. Three ion beams, i.e., Si+, SiCH5+, or C+ ions were injected to depositing SiC films. The energy of Si+, SiCH5+, and C+ ions was 110 eV. The temperature of the substrate was 800 °C. X-ray diffraction of the deposited films showed that 3C–SiC was included in all three samples. X-ray photoelectron spectroscopy (XPS) showed that the C/Si ratio of the obtained SiC film increased significantly following the Si+ or C+ ion beam irradiations. The XPS measurements also showed that the C/Si ratio of the SiC film obtained by injecting SiCH5+ beam during thermal CVD with DMS was lower than that of the SiC film formed by thermal CVD with DMS alone. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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