Autor: |
Sang-Man Han, Taishi Takasawa, Keita Yasutomi, Satoshi Aoyama, Keiichiro Kagawa, Shoji Kawahito |
Jazyk: |
angličtina |
Rok vydání: |
2015 |
Předmět: |
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Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 267-275 (2015) |
Druh dokumentu: |
article |
ISSN: |
2168-6734 |
DOI: |
10.1109/JEDS.2014.2382689 |
Popis: |
This paper presents a CMOS time-of-flight (ToF) range image sensor using high-speed lock-in pixels with background light canceling capability. The proposed lock-in pixel uses MOS gate-induced lateral electric field control of depleted potential of pinned photodiode for implementing a multiple-tap charge modulator while achieving a high-speed charge transfer for high-time resolution. A TOF image sensor with 320 x 240 effective pixels is implemented using a 0.11-μm CMOS image sensor process. The TOF sensor has a range resolution of less than 12 mm without background light and 20 mm under background line for the range from 0.8 to 1.8 m and integration time of 50 ms. The effectiveness of in-pixel background light canceling with a three-tap output pixel is demonstrated. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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