Facile control of p-type SnO TFT performance with restraining redox reaction by ITO interlayers
| Autor: | Su-Hwan Choi, Hye-Mi Kim, Jin-Seong Park |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Journal of Information Display, Vol 24, Iss 2, Pp 119-125 (2023) |
| Druh dokumentu: | article |
| ISSN: | 15980316 2158-1606 1598-0316 |
| DOI: | 10.1080/15980316.2022.2151522 |
| Popis: | By comparing Ni and ITO electrodes of SnO TFT, we find a facile method to control p-type SnO TFT performance. A Ni-electrode TFT has a high field-effect mobility of 3.3 cm2/Vs and a low on/off current ratio of 3.6 × 101. Compared to Ni, ITO-electrode TFT has low field-effect mobility of 1.4 cm2/Vs and a high on/off current ratio of 1.1 × 103. Using various analysis methods, we suggested why the electrical properties of SnO TFT differed depending on the electrode materials. First, a redox reaction occurs at the interface of SnO and Ni during the post-annealing process. Second, Ni has an ohmic-like contact formation with SnO, which lowers the Schottky barrier height of carriers. ITO ILs are adopted to Ni electrode to reduce the off-current by hindering the redox reaction. The off-current of TFTs is effectively reduced with ITO ILs as thickness increases. An ITO IL that is 10-nm thick yields the optimum electrical properties: field-effect mobility of 2.5 cm2/Vs, Ion/Ioff of 1.7 × 103 and Vth shift under NBS of −1.4 V. |
| Databáze: | Directory of Open Access Journals |
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