Autor: |
M. Zervos, C. N. Mihailescu, J. Giapintzakis, C. R. Luculescu, N. Florini, Ph. Komninou, J. Kioseoglou, A. Othonos |
Jazyk: |
angličtina |
Rok vydání: |
2014 |
Předmět: |
|
Zdroj: |
APL Materials, Vol 2, Iss 5, Pp 056104-056104-6 (2014) |
Druh dokumentu: |
article |
ISSN: |
2166-532X |
DOI: |
10.1063/1.4875457 |
Popis: |
Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at 800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by using In:Sn source weight ratios > 1:9 while below this we observe the emergence of tetragonal rutile SnO2 and suppression of In2O3 permitting compositional and structural tuning from SnO2 to In2O3 which is accompanied by a blue shift of the photoluminescence spectrum and increase in carrier lifetime attributed to a higher crystal quality and Fermi level position. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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