Influence of Ni doping in a lead-halide and a lead-free halide perovskites for optoelectronic applications

Autor: M. N. Islam, M. A. Hadi, J. Podder
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: AIP Advances, Vol 9, Iss 12, Pp 125321-125321-8 (2019)
Druh dokumentu: article
ISSN: 2158-3226
DOI: 10.1063/1.5132985
Popis: Metal halide perovskites have become more popular for applications in solar cells and optoelectronic devices. In this study, the structural, electronic, mechanical, and optical properties of lead and lead-free metal halide cubic perovskites CsPbBr3 and CsGeBr3 and their Ni-doped structures have been studied using the first-principle density functional theory. Ni-doped CsGeBr3 shows enhanced absorbance both in the visible and the ultraviolet region. The absorption edge of Ni-doped CsBBr3 (B = Pb, Ge) shifts toward the lower energy region compared to their undoped structures. Undoped and Ni-doped lead and lead-free halides are found to have a direct bandgap, mechanical stability, and ductility. A combined analysis of the electronic, mechanical, and optical properties of these compounds suggests that lead-free perovskite CsGe0.875Ni0.125Br3 is a more suitable candidate for solar cells and optoelectronic applications.
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