Autor: |
Z. Kolka, D. Biolek, V. Biolkova |
Jazyk: |
angličtina |
Rok vydání: |
2015 |
Předmět: |
|
Zdroj: |
Radioengineering, Vol 24, Iss 2, Pp 378-383 (2015) |
Druh dokumentu: |
article |
ISSN: |
1210-2512 |
Popis: |
Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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