Improved Model of TiO2 Memristor

Autor: Z. Kolka, D. Biolek, V. Biolkova
Jazyk: angličtina
Rok vydání: 2015
Předmět:
Zdroj: Radioengineering, Vol 24, Iss 2, Pp 378-383 (2015)
Druh dokumentu: article
ISSN: 1210-2512
Popis: Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.
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