| Autor: |
Shafiq Ahmed, Naresh Padha, Arun Banotra, Ajit Khosla |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Journal of Materials Research and Technology, Vol 21, Iss , Pp 916-928 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2238-7854 |
| DOI: |
10.1016/j.jmrt.2022.09.094 |
| Popis: |
Thin films of Indium sulphide are deposited on corning glass substrate by thermal evaporation at room temperature (300 K). The as-deposited films were annealed from 373 to 723 K under vacuum ∼1 × 10−3 mbar. An amorphous phase is obtained from 300 to 473 K; the polycrystalline β-In2S3 emerges at 523 K, and In2O3 is grown at 723 K. The intermediary phases of β-In2S3 and In2O3 are perceived from 573 to 673 K. A clear distinction between the morphology of β-In2S3 and In2O3 was observed in the micrographs of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The β-In2S3 dominated films provide absorption coefficient (α) from 18 to 25 × 104 cm−1, while α values of In2O3 layers lie within 1–5 × 104 cm−1. The bandgap (Eg) of β-In2S3 thin films is low (2.34 eV), and that of In2O3 is high (3.47 eV); however, the intermediary phases of β-In2S3 and In2O3 exhibit bandgap tunning from 2.30 to 3.14 eV. Moreover, the β-In2S3 shows the highest carrier concentration (Nd; 3.25 × 1018 cm−3), In2O3 provides the highest mobility (μ; 228 Cm2/V.s), and intermediary phases exhibit the lowest resistivity (ρ; 1.27 × 103 Ω/cm) within the existing forms. The thin films β-In2S3 phase grown at 523 and 573 K meet its stoichiometric ratio. In comparison, the In2O3 phase emerges under high oxygen and sulphur deficit conditions. The films are suitable for photo-conduction devices and in the buffer/window layer of PV solar cell design. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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