| Autor: |
Wei-Chen Wen, Yuta Nagatomi, Hiroshi Akamine, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 10, Iss 6, Pp 065119-065119-7 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0002100 |
| Popis: |
Interface traps (ITs) and border traps (BTs) in Al2O3/GeOx/p-Ge gate stacks were characterized using deep-level transient spectroscopy. Through evaluating the gate stacks with different GeOx thicknesses, the respective BTs in Al2O3, the Al2O3/GeOx interface region, and GeOx were detected. The density of ITs (Dit) near the midgap is lower in the metal-oxide-semiconductor (MOS) capacitors with thicker GeOx, while Dit near the valence band is lower in the MOS capacitor with thinner GeOx. The density of BTs (Nbt) in Al2O3 (6–9 × 1017 cm−3) is lower than those in GeOx (∼2 × 1018 cm−3), and the highest Nbt (∼1 × 1019 cm−3) was found in the Al2O3/GeOx interface region. Ge p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) with Al2O3/GeOx/p-Ge gate stacks were fabricated and analyzed. We confirmed that the ITs and the BTs near the valence band edge of Ge affect the effective mobility of Ge p-MOSFETs in the high-field region. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
