| Autor: |
Koji Ito, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Applied Physics Express, Vol 17, Iss 8, p 081003 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
1882-0786 |
| DOI: |
10.35848/1882-0786/ad63ef |
| Popis: |
Free electron mobility ( μ _free ) in 4H-SiC(0001) MOSFETs with gate oxides annealed in NO or POCl _3 was calculated in a wide range of effective normal field ( E _eff ) from 0.02 to 2 MV cm ^−1 , taking account of scattering by fixed charges and trapped electrons. The present calculation indicates that the Hall mobility in the high- E _eff region experimentally obtained for NO-annealed MOSFETs (14 cm ^2 V ^−1 s ^−1 at 1.1 MV cm ^−1 ) is much lower than that for POCl _3 -annealed MOSFETs (41 cm ^2 V ^−1 s ^−1 ) due to severe Coulomb scattering by electrons trapped at a very high density of interface states. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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