Ofstatistical and Fractal Properties of Semiconductor Surface Roughness

Autor:	Stanislav Jurecka, Maria Jureckova, Hikaru Kobayashi, Masao Takahashi, Mohammad Madani, Emil Pincik
Jazyk:	angličtina
Rok vydání:	2008
Předmět:	semiconductor surface afm sic. Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Advances in Electrical and Electronic Engineering, Vol 7, Iss 1 - 2, Pp 377-381 (2008)
Druh dokumentu:	article
ISSN:	1336-1376 1804-3119
Popis:	Surface morphology evolution is of primary significance for the thin-film growth and modification of surface andinterface states. Surface and interface states substantially influence the electrical and optical properties of the semiconductorstructure. Statistical and fractal properties of semiconductor rough surfaces were determined by analysis of the AFM images.In this paper statistical characteristics of the AFM height function distribution, fractal dimension, lacunarity and granulometric density values are used for the surface morphology of the SiC samples description. The results can be used for solution ofthe microstructural and optical properties of given semiconductor structure.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/0e61aa2ab2294524ae6e964676ca185c Zobrazit plný text záznamu View record in DOAJ