| Autor: |
Jianguo Yao, Haixu Liu, Zhankui Wang, Yongwei Zhu, Jianxiu Su |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Machines, Vol 10, Iss 11, p 999 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2075-1702 |
| DOI: |
10.3390/machines10110999 |
| Popis: |
Chemical mechanical polishing (CMP) technology is one of the key technologies to realize the global planarization of semiconductor wafer surfaces. With the increasing popularity and universality of its application, more and higher requirements are put forward for ultra-precision machining. As an important part of the CMP system, polishing pads occupy a dominant position. In this paper, a self-regressive fixed abrasive polishing pad (SR-FAPP) was prepared by photo-curing. The physical and mechanical properties of the SR-FAPP and the retreat threshold of the abrasive particles on the SR-FAPP were studied. After the CMP of the SiC wafer with a polyurethane polishing pad and the SR-FAPP, it was found that the material removal rate of the former was 75% higher than that of the latter, and the surface roughness of the latter was 75% higher than that of the former. In the micro-morphology, the scratches on the surface of the latter’s polished SiC wafer were obviously reduced, which effectively improved the unevenness of the scratches on the surface of the SiC wafer after polishing, thus providing a reference for the preparation and performance research of the polishing pad. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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