Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field
Autor: | Jingjing Guo, Zhongpo Zhou, Hengheng Li, Haiying Wang, Chang Liu |
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Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: | |
Zdroj: | Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019) |
Druh dokumentu: | article |
ISSN: | 1931-7573 1556-276X |
DOI: | 10.1186/s11671-019-2999-6 |
Popis: | Abstract The structural and electronic properties of a monolayer and bilayer blue phosphorene/graphene-like GaN van der Waals heterostructures are studied using first-principle calculations. The results show that the monolayer-blue phosphorene/graphene-like GaN heterostructure is an indirect bandgap semiconductor with intrinsic type II band alignment. More importantly, the external electric field tunes the bandgap of monolayer-blue phosphorene/graphene-like GaN and bilayer-blue phosphorene/graphene-like GaN, and the relationship between bandgap and external electric field indicates a Stark effect. The semiconductor-to-metal transition is observed in the presence of a strong electric field. |
Databáze: | Directory of Open Access Journals |
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