| Autor: |
Nassima Benchtaber, Abdelhakim Nafidi, Driss Barkissy, Abderrezak Boutramine, Merieme Benaadad, Samir Melkoud, Es-Said Es-Salhi, Fatiha Chibane |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Frontiers in Physics, Vol 8 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2296-424X |
| DOI: |
10.3389/fphy.2020.00052 |
| Popis: |
We have used the envelope function formalism to investigate the bands structure of LWIR type II SL InAs (d1 = 2. 18d2)/In0.25Ga0.75Sb(d2 = 21.5 Å). Thus, we extracted optical and transport parameters as the band gap, cut off wavelength, carriers effective mass, Fermi level and the density of state. Our results show that the higher optical cut-off wavelength can be achieved with smaller layer thicknesses. The semiconductor-semi metal transition was studied as a function of temperature. Our results permit us the interpretations of Hall and Shubnikov-de Haas effects. These results are in agreement with experimental results in literature and a guide for engineering infrared detectors. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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