| Autor: |
Theodore D C Hobson, Luke Thomas, Laurie J Phillips, Leanne A H Jones, Matthew J Smiles, Christopher H Don, Pardeep K Thakur, Huw Shiel, Stephen Campbell, Vincent Barrioz, Vin Dhanak, Tim Veal, Jonathan D Major, Ken Durose |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
JPhys Energy, Vol 5, Iss 4, p 045012 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2515-7655 |
| DOI: |
10.1088/2515-7655/acfbf8 |
| Popis: |
We explored the in-situ doping of cadmium telluride thin films with indium to produce n-type absorbers as an alternative to the near-universal choice of p-type for photovoltaic devices. The films were grown by close space sublimation from melt-synthesised feedstock. Transfer of the indium during film growth was limited to 0.0014%–0.014%—unless reducing conditions were used which yielded 14%–28% efficient transport. While chunks of bulk feedstock were verified as n-type by the hot probe method, carrier type of thin film material was only able to be verified by using hard x-ray photoelectron spectroscopy to determine the Fermi level position within the band gap. The assignment of n-type conductivity was consistent with the rectification behaviour of a p-InP/CdTe:In junction. However, chloride treatment had the effect of compensating n-CdTe:In to near-intrinsic levels. Without chloride, the highest dopant activation was 20% of the chemical concentration of indium, this being for a film having a carrier concentration of n = 2 × 10 ^15 cm ^−3 . However, the activation was often much lower, and compensation due to over-doping with indium and native defects (stoichiometry) are discussed. Results from preliminary bifacial devices comprising Au/P3HT/ZnTe/CdTe:In/CdS/FTO/glass are presented. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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