| Autor: |
Deb Kumar Shah, Devendra KC, M. Shaheer Akhtar, Chong Yeal Kim, O-Bong Yang |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Applied Sciences, Vol 10, Iss 17, p 6062 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2076-3417 |
| DOI: |
10.3390/app10176062 |
| Popis: |
This paper describes the unique antireflection (AR) layer of vertically arranged ZnO nanorods (NRs) on crystalline silicon (c-Si) solar cells and studies the charge transport and photovoltaic properties by simulation. The vertically arranged ZnO NRs were deposited on ZnO-seeded c-Si wafers by a simple low-temperature solution process. The lengths of the ZnO NRs were optimized by changing the reaction times. Highly dense and vertically arranged ZnO NRs were obtained over the c-Si wafer when the reaction time was 5 h. The deposited ZnO NRs on the c-Si wafers exhibited the lowest reflectance of ~7.5% at 838 nm, having a reasonable average reflectance of ~9.5% in the whole wavelength range (400–1000 nm). Using PC1D software, the charge transport and photovoltaic properties of c-Si solar cells were explored by considering the lengths of the ZnO NRs and the reflectance values. The 1.1 μm length of the ZnO NRs and a minimum average reflectance of 9.5% appeared to be the optimum values for achieving the highest power conversion efficiency of 14.88%. The simulation study for the vertically arranged ZnO NRs AR layers clearly reflects that the low-temperature deposited ZnO NRs on c-Si solar cells could pose a greater prospect in the manufacturing of low-cost c-Si solar cells. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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