| Autor: |
Erdin Ture, Peter Bruckner, Birte-Julia Godejohann, Rolf Aidam, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rudiger Quay, Oliver Ambacher |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2015.2503701 |
| Popis: |
Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors are highly-scaled having 100 nm of gate length, which introduces the condition of a short channel. It is demonstrated that higher sub-threshold slopes, reduced drain-induced barrier lowering and better overall off-state performances have been achieved by the nano-channel tri-gate HEMTs with an AlGaN barrier. A lattice-matched InAlGaN barrier with the help of the fin-shaped nano-channels provide improved gate control, increasing current densities, and transconductance gm. In a direct comparison, very high drain current densities (~3.8 A/mm) and gm (~550 mS/mm) have further been obtained by employing a pure AlN barrier. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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