Angle-Dependent Raman Scattering Studies on Anisotropic Properties of Crystalline Hexagonal 4H-SiC
| Autor: | Zhe Chuan Feng, Dishu Zhao, Lingyu Wan, Weijie Lu, Jeffrey Yiin, Benjamin Klein, Ian T. Ferguson |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
silicon carbide
4H-SiC raman scattering anisotropic property angular dependence raman tensor Technology Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
| Zdroj: | Materials, Vol 15, Iss 24, p 8751 (2022) |
| Druh dokumentu: | article |
| ISSN: | 1996-1944 |
| DOI: | 10.3390/ma15248751 |
| Popis: | Raman scattering spectroscopy (RSS) has the merits of non-destructiveness, fast analysis, and identification of SiC polytype materials. By way of angle-dependent Raman scattering (ADRS), the isotropic characteristics are confirmed for c-face 4H-SiC, while the anisotropic properties of a-face 4H-SiC are revealed and studied in detail via combined experiments and theoretical calculation. The variation functional relationship of the angle between the incident laser polarization direction and the parallel (perpendicular) polarization direction was well established. The selection rules of wurtzite 4H-SiC are deduced, and the intensity variations of the A1, E2, and E1 Raman phonon modes dependent on the incident angle are calculated, and well-matched with experimental data. Raman tensor elements of various modes are determined. |
| Databáze: | Directory of Open Access Journals |
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