Study the Effect of Zn Doping in the Structural and Electrical Properties of CdTe Thin Films
| Autor: | Alia A. M. Shehab, Iqbal S. N. Abd, Hanaa I. Mohammed |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | Ibn Al-Haitham Journal for Pure and Applied Sciences, Vol 27, Iss 1 (2017) |
| Druh dokumentu: | article |
| ISSN: | 1609-4042 2521-3407 |
| Popis: | Some of structural ,and electrical properties of pure and zinc (Zn) doped cadmium telluride thin films with impurity percentages (0.5, 1, 1.5)%, deposited on hot glass substrate (temperature equals to 423K) of thickness of 300nm and rate deposition of 0.5 nm.s-1 by thermal co-evaporation technique under vacuum of (2×10-5)Torr have been investigates. The structural properties for the prepared films were studied before and after. doping process by analysis of the X-ray diffraction, and it appeared that pure and dopant CdTe thin films are polycrystalline and have the cubic structure with preferential orientation in the [111] direction, and the crystal structure of the films were improved due to doping process. From d.c.electrical conductivity in range of (291-495)K, we noticed that there are two activation energies Ea1 and Ea2, and their values decrease with the..increase.of.Zn.percentages,so..(σd.c.)..of..those..thin.films.increase . From Hall.effect. measurements we showed that the..(σd.c.).. for CdTe thin film is of n-type and converted to p-type when they adopted with Zn, and charge carrier concentration increases with the increase of Zn percentages, so Hall mobility (μH) decreases |
| Databáze: | Directory of Open Access Journals |
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