| Autor: |
Harshit Agarwal, Chetan Gupta, Pragya Kushwaha, Chandan Yadav, Juan P. Duarte, Sourabh Khandelwal, Chenming Hu, Yogesh S. Chauhan |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 240-243 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2015.2415584 |
| Popis: |
In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold voltage extraction techniques, and good agreement is obtained. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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