| Autor: |
Yu Sun, Walter Schwarzenbach, Sicong Yuan, Zhuo Chen, Yanbin Yang, Bich-Yen Nguyen, Dawei Gao, Rui Zhang |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 11, Pp 210-215 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2023.3260978 |
| Popis: |
The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during the NBTI stress of Ge-OI pMOSFETs. The lower NBTI is confirmed for the Ge-OI pMOSFETs with a thinner channel, due to the reduction of the band bending of ${\mathrm{ E}}_{\mathrm{ v}}$ under a fixed electrical field of NBTI stress. Thus, the channel thickness scaling could be an effective method to improve the NBTI reliability for Ge-OI pMOSFETs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
