| Autor: |
Chaiwon Woo, Yannick Raffel, Ricardo Olivo, Konrad Seidel, Aleksander Gurlo |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Memories - Materials, Devices, Circuits and Systems, Vol 6, Iss , Pp 100091- (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2773-0646 |
| DOI: |
10.1016/j.memori.2023.100091 |
| Popis: |
In recent years, there has been significant progress in the development of high-κ materials in the semiconductor industry. Given that the contact between the channel and the electrode has a crucial impact on reliability, the selection of electrode materials and their deposition technology is an area that requires extensive research. Additionally, interface trap density has long played a critical role in determining the reliability of field-effect transistors (FETs). Therefore, this paper presents the results of interface trap density in high-κ FETs obtained using 2-level and 3-level charge pumping methods. Measurements were conducted on a 10 nm oxide thickness n-doped silicon substrate using native k materials such as silicon and zirconium-doped hafnium oxide. The results demonstrate that chlorine-based HfO2 oxide with zirconium doping exhibits the lowest interface defects. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
