| Autor: |
Yasuto Hijikata, Ryosuke Asafuji, Ryotaro Konno, Yurie Akasaka, Ryo Shinoda |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 5, Iss 6, Pp 067128-067128-7 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4922536 |
| Popis: |
Si and C emission into the oxide layer during the oxidation of silicon carbide and SiO2 growth on the oxide surface were experimentally confirmed from depth profiles of oxidized HfO2/SiC structures. With longer oxidation times, surface SiO2 growth transitioned to oxide/SiC interface growth. The influence of Si and C emission on the oxidation rate was investigated by real-time measurements of the oxide growth rate. Experimental observations of annealing-inserted oxidation and two-temperature oxidation indicated that the emission suppressed the oxidation rate. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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