Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

Autor:	G. Antoun, T. Tillocher, P. Lefaucheux, J. Faguet, K. Maekawa, R. Dussart
Jazyk:	angličtina
Rok vydání:	2021
Předmět:	Medicine Science
Zdroj:	Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Druh dokumentu:	article
ISSN:	2045-2322
DOI:	10.1038/s41598-020-79560-z
Popis:	Abstract Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and spectroscopic ellipsometry analyses to evaluate the residence time of physisorbed C4F8 molecules versus temperature and pressure on SiO2 surface. QMS monitoring of the SiF4 etching by-product also enabled to follow the self-limiting etching behavior. Finally, a SiO2 cryo-ALE process was proposed at a temperature of − 90 °C resulting in a very linear etch over 150 cycles and an Etch amount Per Cycle as low as 0.13 nm/cycle.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/0a7f4f228c87483582d3a8e6f0585dd8 Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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