Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

Autor: Anna Giorgioni, Stefano Paleari, Stefano Cecchi, Elisa Vitiello, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli, Fabio Pezzoli
Jazyk: angličtina
Rok vydání: 2016
Předmět:
Zdroj: Nature Communications, Vol 7, Iss 1, Pp 1-11 (2016)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/ncomms13886
Popis: Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.
Databáze: Directory of Open Access Journals