| Autor: |
Jiyeon Ma, Oukjae Lee, Geonwook Yoo |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1124-1128 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2018.2868905 |
| Popis: |
In this paper, we report on the electrical and thermal instability of β-Ga2O3 nanomembrane field-effect transistor with a bottom-gate configuration. The fabricated device exhibits high electrical performance of field-effect mobility of up to 60.9 cm2/V·s, on/off-current ratio of 109 and subthreshold slope of 210 mV/dec. However, we observe abnormal positive threshold voltage (VTH) shifts under negative bias-temperature stress at an elevated operating temperature of 80 °C as well as under temperature-dependent transfer characteristics up to 200 °C. This abnormal instability is significantly influenced by the surface depletion effect, and is discussed using energy band diagram. The opposite VTH shift was achieved by applying atomic-layer deposited Al2O3 passivation layer. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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