| Autor: |
Quantong Li, Albert Minj, Yunzhi Ling, Changan Wang, Siliang He, Xiaoming Ge, Chenguang He, Chan Guo, Jiantai Wang, Yuan Bao, Zhuming Liu, Pierre Ruterana |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Crystals, Vol 13, Iss 7, p 1027 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst13071027 |
| Popis: |
We have investigated the interface dislocations in InxGa1−xN/GaN heterostructures (0 ≤ x ≤ 0.20) using diffraction contrast analysis in a transmission electron microscope. The results indicate that the structural properties of interface dislocations depend on the indium composition. For lower indium composition (up to x = 0.09), we observed that the screw-type dislocations and dislocation half-loops occurred at the interface, even though the former do not contribute toward elastic relaxation of the misfit strain in the InGaN layer. With the increase in indium composition (0.13 ≤ x ≤ 0.17), in addition to the network of screw-type dislocations, edge-type misfit dislocations were generated, with their density gradually increasing. For higher indium composition (0.18 ≤ x ≤ 0.20), all of the interface dislocations are transformed into a network of straight misfit dislocations along the direction, leading to partial relaxation of the InGaN epilayer. The presence of dislocation half-loops may be explained by a slip on basal plane; formation of edge-type misfit dislocations are attributed to punch-out mechanism. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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