Growth and characterization of detector-grade CdMnTeSe

Autor: J. Byun, J. Seo, B. Park
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Nuclear Engineering and Technology, Vol 54, Iss 11, Pp 4215-4219 (2022)
Druh dokumentu: article
ISSN: 1738-5733
DOI: 10.1016/j.net.2022.06.007
Popis: The Cd0.95Mn0.05Te0.98Se0.02 (CMTS) ingot was grown by the vertical Bridgman technique at low pressure. All wafers showed high resistivity, which suggests potential as a room-temperature semiconductor detector. The resistivity of the CMTS planar detector was 1.47 × 1010 Ω· cm and mobility lifetime product of electrons was 1.29 × 10−3 cm2/V. The spectroscopic property with Am-241 and Co-57 was evaluated. The energy resolution about 59.5 keV gamma-ray of Am-241 was 11% and the photo-peak of 122 keV gamma-ray from Co-57 was clearly distinguished. The result shows the first detector-grade CMTS in the world and proves CMTS’s potential as a radiation detector operating at room temperature.
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