| Autor: |
Haoying Sun, Jierong Wang, Yushu Wang, Changqing Guo, Jiahui Gu, Wei Mao, Jiangfeng Yang, Yuwei Liu, Tingting Zhang, Tianyi Gao, Hanyu Fu, Tingjun Zhang, Yufeng Hao, Zhengbin Gu, Peng Wang, Houbing Huang, Yuefeng Nie |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-022-31763-w |
| Popis: |
Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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