| Autor: |
Koki Miwatashi, Takashi Hirakawa, Naoki Shinohara, Tomohiko Mitani |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of Microwaves, Vol 2, Iss 4, Pp 711-719 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2692-8388 |
| DOI: |
10.1109/JMW.2022.3204434 |
| Popis: |
This study theoretically and experimentally indicates that a charge pump rectifier for low-power rectifiers such as RF-ID can be applied to high-power rectifiers and can attain the same level of RF-dc conversion efficiency and twice as high power rectification as the single-shunt rectifiers. A high-power rectifier is primarily a single-shunt rectifier, and a charge pump rectifier that applies twice the output voltage is used in low-power applications such as RF-ID. We aim to enhance the power of charge pump rectifiers by focusing on their characteristics. A fabricated 5.8 GHz charge pump rectifier achieved an RF-dc conversion efficiency of 70.8% at an input power of 8.0 W and a load resistance of $150\,\Omega$. This result is also the highest efficiency for 39 dBm rectifiers in the 5.8 GHz band. Compared to a single-shunt rectifier with the same diode, the charge pump rectifier generated twice the input power and efficiency difference of 2.9% at the maximum input power. These results indicate that the charge pump rectifier has an advantage over the single-shunt rectifier in high-power rectifiers. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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