| Autor: |
Davide F. Grossi, Sebastian Koelling, Pavel A. Yunin, Paul M. Koenraad, Grigory V. Klimko, Sergey V. Sorokin, Mikhail N. Drozdov, Sergey V. Ivanov, Alexey A. Toropov, Andrei Y. Silov |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Nanomaterials, Vol 10, Iss 7, p 1315 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano10071315 |
| Popis: |
The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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